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BSM150GB120DN2E3166
IGBT Power Module Preliminary data * Half-bridge * Including fast free-wheeling diodes * Enlarged diode area * Package with insulated metal base plate Type BSM150GB120DN2E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
IC
Package HALF-BRIDGE 2
Ordering Code C67076-A2112-A70
1200V 210A
VCE VCGR VGE IC
RGE = 20 k
Gate-emitter voltage DC collector current
20 A 210 150
TC = 25 C TC = 80 C
Pulsed collector current, tp = 1 ms
ICpuls
420 300
TC = 25 C TC = 80 C
Power dissipation per IGBT
Ptot
1250
W + 150 -55 ... + 150 0.1 0.125 2500 20 11 F 55 / 150 / 56 Vac mm K/W C
TC = 25 C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJCD Vis
-
Semiconductor Group
1
Aug-02-1996
BSM150GB120DN2E3166
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 2 10 6.5 3 3.7
V
VGE = VCE, IC = 6 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 150 A, Tj = 25 C VGE = 15 V, IC = 150 A, Tj = 125 C
Zero gate voltage collector current
ICES
3 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 C VCE = 1200 V, VGE = 0 V, Tj = 125 C
Gate-emitter leakage current
IGES
320
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
62 11 1.6 0.6 -
S nF -
VCE = 20 V, IC = 150 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Aug-02-1996
BSM150GB120DN2E3166
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit
td(on)
200 400
ns
VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6
Rise time
tr
100 200
VCC = 600 V, VGE = 15 V, IC = 150 A RGon = 5.6
Turn-off delay time
td(off)
600 800
VCC = 600 V, VGE = -15 V, IC = 150 A RGoff = 5.6
Fall time
tf
70 100
VCC = 600 V, VGE = -15 V, IC = 150 A RGoff = 5.6
Free-Wheel Diode Diode forward voltage
VF
1.4 1.8 1.35 2.3 -
V
IF = 150 A, VGE = 0 V, Tj = 25 C IF = 150 A, VGE = 0 V, Tj = 125 C
Reverse recovery time
trr
0.5 -
s
IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/s, Tj = 125 C
Reverse recovery charge
Qrr
C
IF = 150 A, VR = -600 V, VGE = 0 V diF/dt = -1500 A/s Tj = 25 C Tj = 125 C
12 36 -
Semiconductor Group
3
Aug-02-1996
BSM150GB120DN2E3166
Power dissipation Ptot = (TC) parameter: Tj 150 C
1300 W 1100
Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C
10 3
tp = 18.0s
A
Ptot
1000 900 800 700 600 500
IC
10 2
100 s
1 ms
10 400 300 200 100 0 0 20 40 60 80 100 120 C 160
1
10 ms
10 0 0 10
10
1
10
2
DC 3 10
V
TC
VCE
Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C
240 A 200
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
IGBT
K/W
IC
180 160 140 120 100 80 60 40
ZthJC
10 -1
10 -2 D = 0.50 0.20 0.10 10 -3 0.05 0.02 0.01 single pulse
20 0 0 20 40 60 80 100 120 C 160 10 -4 -5 10 10
-4
10
-3
10
-2
10
-1
s 10
0
TC
tp
Semiconductor Group
4
Aug-02-1996
BSM150GB120DN2E3166
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 s, Tj = 25 C
300 A 260 17V 15V 13V 11V 9V 7V
IC = f (VCE)
parameter: tp = 80 s, Tj = 125 C
300 A 260 17V 15V 13V 11V 9V 7V
IC
240 220 200 180 160 140 120 100 80 60 40 20 0 0
IC
240 220 200 180 160 140 120 100 80 60 40 20 0 0
1
2
3
V
5
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 s, VCE = 20 V
300 A 260
IC
240 220 200 180 160 140 120 100 80 60 40 20 0 0
2
4
6
8
10
V 14 VGE
Semiconductor Group
5
Aug-02-1996
BSM150GB120DN2E3166
Typ. gate charge VGE = (QGate) parameter: IC puls = 150 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 2
nF
VGE
16 14 12 10 8
C
600 V
800 V
10 1
Ciss
10 0 6 4 2 0 0 10 -1 0
Coss Crss
200
400
600
800
nC
1100
5
10
15
20
25
30
QGate
V 40 VCE
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V
2.5
ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 20 nH
12
ICpuls/IC
ICsc/IC
8 1.5 6 1.0 4
0.5 2
0.0 0 200 400 600 800 1000 1200 V 1600 VCE
0 0 200 400 600 800 1000 1200 V 1600 VCE
Semiconductor Group
6
Aug-02-1996
BSM150GB120DN2E3166
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 5.6
10 4
t = f (RG) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, IC = 150 A
10 4
ns t 10 3 tdoff t
ns tdoff 10 3
tdon tdon tr 10 2 tf 10 2 tf tr
10 1 0
50
100
150
200
250
300
A IC
400
10 1 0
10
20
30
40
60
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 5.6
120
E = f (RG) , inductive load , Tj = 125C
par.: VCE = 600V, VGE = 15 V, IC = 150 A
120
mWs E
Eon
mWs E
80
80
Eon
60
60
40 Eoff
40 Eoff 20
20
0 0
50
100
150
200
250
300
A IC
400
0 0
10
20
30
40
60
RG
Semiconductor Group
7
Aug-02-1996
BSM150GB120DN2E3166
Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj
300 A 260
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
Diode
Tj=125C
Tj=25C ZthJC
K/W
IF
240 220 200 180 160 140 120 100 80 60 40 20 0 0.0
10 -1
10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01
0.5
1.0
1.5
2.0
V
3.0
10 -4 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
VF
tp
Semiconductor Group
8
Aug-02-1996
BSM150GB120DN2E3166
Circuit Diagram
Package Outlines Dimensions in mm Weight: 420 g
Semiconductor Group
9
Aug-02-1996

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